Influences of Cr doping on the electrical properties in BiFeO3 thin films

Ferroelectrics, Letters Section

Volumn 33, Issue 3-4, 2006, Pages 91-100

  Kim, J K ^a   Kim, S S ^a   Kim, W J ^a   Park, M H ^a   Bhalla, A S ^b   Guo, R ^b  

^a Changwon National University   (South Korea)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

Bismuth iron oxide; Capacitors; Electrical properties; Vacancies

Indexed keywords

BISMUTH COMPOUNDS; CURRENT DENSITY; DEPOSITION; DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; FERROELECTRICITY; LEAKAGE CURRENTS;

BISMUTH IRON OXIDES; EXTERNAL ELECTRIC FIELDS; OXYGEN VACANCIES; SILICON SUBSTRATES;

FERROELECTRIC THIN FILMS;

EID: 33750081092     PISSN: 07315171     EISSN: 15635228     Source Type: Journal    
DOI: 10.1080/07315170600870667     Document Type: Article

References (20)

1. J. B. Neaton, C. Ederer, U. V. Waghmare, N. A. Spaldin, and K. M. Rabe, Phys. Rev. B 71, 014113 (2005).
2. M. Mahesh Kumar, V. R. Palkar, K. Srinivas, and S. V. Suryanarayana, Appl. Phys. Lett. 76, 2764 (2000).
3. C. Michel, K.-M. Moreau, G. D. Achenbach, R. Gerson, and W. J. James, Solid State Commun. 7, 701 (1969).
4. N. Hur, S. Park, P. A. Sharma, J. S. Ahn, S. Guha, and S.-W. Cheong, Science 429, 392 (2004).
5. T. Kimura, S. Kawamoto, I. Yamade, M. Azuma, M. Takano, and Y. Tokura, Phys. Rev. B 67, 180401 (2003).
6. J. Y. Son, B. G. Kim, C. H. Kim, and J. H. Cho, Appl. Phys. Lett. 84, 4971 (2004).
7. J. R. Teague, R. Gerson, and W. J. James, Solid State Commun. 8, 1073 (1970).
8. V. R. Palkar, J. John, and R. Pinto, Appl. Phys. Lett. 80, 1628 (2002).
9. J. Wang, J. B. Neaton, H. Zheng, V. Nagarajan, S. B. Ogale, B. Liu, D. Viehland, V. Vaithyanathan, D. G. Schlom, U. V. Waghmare, N. A. Spaldin, K. M. Rabe, M. Wuttig, and R. Ramesh, Science 299, 1719 (2003).
10. J. Wang, H. Zheng, Z. Ma, S. Prasertchoung, M. Wuttig, R. Droopad, J. Yu, K. Eisenbeiser, and R. Ramesh, Appl. Phys. Lett. 85, 2574 (2004).
11. K. Y. Yun, M. Noda, and M. Okuyama, Appl. Phys. Lett. 83, 3981 (2003).
12. K. Y. Yun, D. Ricinschi, T. Kanashima, M. Noda, and M. Okuyama,. Jpn. J. Appl. Phys. 43, L647 (2004).
13. K. Y. Yun, M. Noda, M. Okuyama, H. Saeki, H. Tabata, and K. Saito, J. Appl. Phys. 96, 3399 (2004).
14. K. Y. Yun, M. Noda, and M. Okuyama, J. Korean Phys. Soc. 42, S1153 (2003).
15. S. Lakovlev, C.-H. Solterbeck, M. Kuhnke, and M. Es-Souni, J. Appl. Phys. 97, 094901 (2005).
16. X. Qi, J. Dho, R. Tomov, M. G. Blamire, and J. L. MacManus-Driscoll, Appl. Phys. Lett. 86, 062903 (2005).
17. A. Rose, Phys. Rev. 97, 1538 (1955).
18. J. C. Shin, C. S. Hwang, and H. J. Kim, Appl. Phys. Lett. 75, 3411 (1999).
19. M. Copel, J. D. Baniecki, P. R. Duncombe, D. Kotecki, R. Laibowitz, D. A. Neumayer, and T. M. Shaw, Appl. Phys. Lett. 73, 1832 (1998).
20. N. A. Hill, P. Bättig, and C. Daul, J. Phys. Chem. B 106, 3383 (2002).