Influence of the nature of oxide matrix on the photoluminescence spectrum of ion-synthesized silicon nanostructures

Thin Solid Films

Volumn 515, Issue 1, 2006, Pages 333-337

  Tetelbaum, D I ^a,b   Gorshkov, O N ^a   Ershov, A V ^a   Kasatkin, A P ^a   Kamin, V A ^a   Mikhaylov, A N ^a,b   Belov, A I ^a   Gaponova, D M ^c   Pavesi, L ^d   Ferraioli, L ^d   Finstad, T G ^e   Foss, S ^e  

^a LOBACHEVSKY STATE UNIVERSITY OF NIZHNY NOVGOROD   (Russian Federation)

^b Surface Phenomena Researches Group   (Russian Federation)

^c RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^d UNIVERSITY OF TRENTO   (Italy)

^e UNIVERSITY OF OSLO   (Norway)

Author keywords

Ion implantation; Nanostructures; Oxides; Photoluminescence

Indexed keywords

ION SYNTHESIS; NANOSTRUCTURES; SILICON SUBSTRATES;

ANNEALING; ION IMPLANTATION; OXIDES; PHOTOLUMINESCENCE; SILICA; THIN FILMS;

NANOSTRUCTURED MATERIALS;

EID: 33750004473     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.12.088     Document Type: Article

References (21)

1. Garrido Fernandez B., Lopez M., Garcia C., Perez-Rodriguez A., Morante J.R., Bonafos C., Carrada M., and Claverie A. J. Appl. Phys. 91 (2002) 798
2. Pellegrino P., Garrido B., Garcia C., Arbiol J., Morante J.R., Melchiorri M., Daldosso N., Pavesi L., Scheid E., and Sarrabayrouse G. J. Appl. Phys. 97 (2005) 074312
3. Wilk G.D., Wallace R.M., and Anthony J.M. J. Appl. Phys. 89 (2001) 5243
4. Hill K.O., Fujii Y., Johnson D.C., and Kawasaki B.S. Appl. Phys. Lett. 32 (1978) 647
5. Dianov E.M., Abramov A.A., Bubnov M.M., Prokhorov A.M., Shipulin A.V., Devjatykh G.G., Guryanov A.N., and Khopin V.F. Electron. Lett. 31 (1995) 1057
6. Sulimov V.B., and Sokolov V.O. J. Non-Cryst. Solids 191 (1995) 260
7. Nishikawa H., Shiroyama T., Nakamura R., Ohki Y., Nagasawa K., and Hama Y. Phys. Rev., B 45 (1992) 586
8. Meinardi F., and Paleari A. Phys. Rev., B 58 (1998) 3511
9. Valakh M.Ya., Yukhimchuk V.A., Bratus' V.Ya., Konchits A.A., Hemment P.L.F., and Komoda T. J. Appl. Phys. 85 (1999) 168
10. Kajihara K., Skuja L., Hirano M., and Hosono H. Appl. Phys. Lett. 79 (2001) 1757
11. Kachurin G.A., Volodin V.A., Tetel'baum D.I., Marin D.V., Leer A.F., Gutakovski A.K., Cherkov A.G., and Mikhaylov A.N. Semiconductors 39 (2005) 552
12. Mikhaylov A.N., Tetelbaum D.I., Gorshkov O.N., Kasatkin A.P., Belov A.I., and Morozov S.V. Vacuum 78 (2005) 519
13. Kachurin G.A., Leier A.F., Zhuravlev K.S., Tyschenko I.E., Gutakovski A.K., Volodin V.A., Skorupa W., and Yankov R.A. Semiconductors 32 (1998) 1222
14. Yi L.X., Heitmann J., Scholz R., and Zacharias M. Appl. Phys. Lett. 81 (2002) 661
15. Gorshkov O.N., Dudin Yu.A., Kamin V.A., Kasatkin A.P., Mikhaylov A.N., Novikov V.A., and Tetelbaum D.I. Tech. Phys. Lett. 31 (2005) 509
16. Simmons K.D., Potter Jr. B.G., and Stegeman G.I. Appl. Phys. Lett. 64 (1994) 2537
17. Takeoka S., Toshikiyo K., Fujii M., Hayashi S., and Yamamoto K. Phys. Rev., B 61 (2000) 15988
18. Evans B.D., Pogatshnik G.J., and Chen Y. Nucl. Instrum. Methods B 91 (1994) 258
19. Bausa L.E., Vergara I., Jaque F., and Garcia Sole J. J. Phys., Condens. Matter 2 (1990) 9919
20. Jardin C., Canut B., and Ramos S.M.M. J. Phys., D, Appl. Phys. 29 (1996) 2066
21. Park C.J., Kwon Y.H., Lee Y.H., Kang T.W., Cho H.Y., Kim S., Choi S.-H., and Elliman R.G. Appl. Phys. Lett. 84 (2004) 2667