Low-frequency noise in SiGe channel pMOSFETs on ultra-thin body SOI with Ni-silicided source/drain

AIP Conference Proceedings

Volumn 780, Issue , 2005, Pages 307-310

  Von Haartman, M ^a   Hallstedt J ^a   Seger, J ^a   Malm, B G ^a   Hellstrom P E ^a   Ostling M ^a  

^a ROYAL INSTITUTE OF TECHNOLOGY KTH   (Sweden)

Author keywords

1 f noise; Fully depleted (FD); Low frequency noise; MOSFETs; Schottky Barrier (SB); SiGe; Silicon on insulator (SOI)

Indexed keywords

EID: 33749498434     PISSN: 0094243X     EISSN: 15517616     Source Type: Conference Proceeding    
DOI: 10.1063/1.2036756     Document Type: Conference Paper

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