Origin of the crystalline orientation dependence of the electrical properties in tin-doped indium oxide films

Thin Solid Films

Volumn 392, Issue 2, 2001, Pages 265-268

  Kamei, Masayuki ^a   Enomoto, Hiromi ^b   Yasui, Itaru ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

Author keywords

Electrical properties and measurements; Epitaxy; Indium tin oxide; Sputtering

Indexed keywords

CARRIER CONCENTRATION; CRYSTAL ORIENTATION; OXYGEN; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SPUTTER DEPOSITION; TIN;

INTERSTITIAL OXYGEN;

SEMICONDUCTING FILMS;

EID: 0035974515     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(01)01041-0     Document Type: Conference Paper

References (15)