First demonstration of 4H-SiC RF bipolar junction transistors on a semi-insulating substrate with fT/fMAX of 1/5.2 GHz

IEEE MTT-S International Microwave Symposium Digest

Volumn 2005, Issue , 2005, Pages 2035-2038

  Zhao, Feng ^a,b   Perez Wurfl, Ivan ^a   Huang, Chin Fang ^a   Torvik, John ^a   Van Zeghbroeck, Bart ^a,b  

^a MICROSEMI CORPORATION   (United States)

^b University of Colorado at Boulder   (United States)

Author keywords

4H SiC, RF bJTs; Ft; Gmax; L band; Semi insulating substrate; UHF

Indexed keywords

ELECTRIC CURRENTS; OPTIMIZATION; POWER ELECTRONICS; RADIOFREQUENCY SPECTROSCOPY; SCATTERING PARAMETERS; SILICON CARBIDE;

INTERDIGITATED EMITTER-BASE FINGER DESIGN; L-BAND; SEMI INSULATING SUBSTRATES; UNILATERAL POWER GAIN;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 33749236818     PISSN: 0149645X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/MWSYM.2005.1517145     Document Type: Conference Paper

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