Power Amplification in UHF Band using SiC RF Power BJTs

Proceedings IEEE Lester Eastman Conference on High Performance Devices

Volumn , Issue , 2002, Pages 41-49

  Agarwal, Anant ^a   Capell, Craig ^a   Phan, Binh ^b   Milligan, James ^a   Palmour, John W ^a   Stambaugh, Jerry ^b   Bartlow, Howard ^b   Brewer, Ken ^b  

^a Arkansas Power Electronics International Inc   (United States)

^b Cree Microwave   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMPLIFICATION; ELECTRIC BREAKDOWN; ELECTRIC CURRENTS; GAIN MEASUREMENT; SILICON CARBIDE;

POWER AMPLIFICATION;

BIPOLAR TRANSISTORS;

EID: 0242302536     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (3)

1. S-H. Ryu et al., IEEE Electron Device Letters, vol. 22, pp. 124-126, 2001.
2. Y. Tang et al., IEEE Electron Device Letters, vol. 22, pp. 119-122, 2001.
3. H-T. Yuan et al., IEEE Trans. Electron Devices, ED-25, pp. 731-736, 1978.