RF performance and reliability of SiC MESFETs on high purity semi-insulating substrates

Materials Science Forum

Volumn 457-460, Issue II, 2004, Pages 1205-1208

  Sriram, S ^a   Ward, A ^a   Janke, C ^a   Alcorn, T ^a   Hagleitner, H ^a   Henning, J ^a   Wieber, K ^a   Jenny, J ^a   Sumakeris, J ^a   Allen, S ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

MESFET; Reliability; RF power; SIC; Trapping

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC INSULATING MATERIALS; HIGH TEMPERATURE EFFECTS; PARAMETER ESTIMATION; PROBLEM SOLVING; SAMPLING;

POWER DENSITIES; RF POWER; STANDARD DEVIATION; TRAPPING;

MESFET DEVICES;

EID: 8744227036     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.457-460.1205     Document Type: Conference Paper

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