X-ray absorption and photoemission spectroscopy of 3C- and 4H-SiC

Surface Science

Volumn 600, Issue 18, 2006, Pages 3879-3883

  Tallarida, M ^a   Schmeisser, D ^a   Zheng, F ^b   Himpsel, F J ^b  

^a BRANDENBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^b University of Wisconsin Madison   (United States)

Author keywords

NEXAFS; Photoelectron emission; Silicon carbide

Indexed keywords

BAND STRUCTURE; BRILLOUIN SCATTERING; ELECTRONIC PROPERTIES; PHOTOEMISSION;

CONDUCTION BANDS; DISPERSIVE BANDS; POLYTYPES; X RAY ABSORPTION (XAS);

SILICON CARBIDE;

EID: 33749120260     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.01.096     Document Type: Article

References (31)

1. Park C.H., Cheong B.-H., Lee K.-H., and Chang K.J. Phys. Rev. B 49 (1994) 4485
2. Käckell P., Wenzien B., and Bechstedt F. Phys. Rev. B 50 (1994) 1076
3. Pollmann J., and Krüger P. Handbook of Surface Science vol. 2 (2000), Elsevier Science BV p. 96
4. Lambrecht W.R., Limpijumnong S., Rashkeev S.N., and Segall B. Phys. Status Solidi (B) 202 (1997) 5
5. Xu P., Xie C., Pan H., and Xu F. J. El. Spec. 144-147 (2005) 593
6. Zhao G.L., and Bagayoko D. New J. Phys. 2 (2000) 16
7. Bernstein N., Gotsis H.J., Papaconstantopoulos D.A., and Mehl M.J. Phys. Rev. B 71 (2005) 075203
8. Wellenhofer G., and Rössler U. Phys. Status Solidi (B) 202 (1997) 107
9. Wenzien B., Käckell P., and Bechstedt F. Phys. Rev. B 52 (1994) 10897
10. Pennington G., and Goldman N. Phys. Rev. B 64 (2001) 045104
11. Jiang Z., Xu X., Wu H., Zhang F., and Jin Z. Solid State Commun. 123 (2002) 263
12. Adolph B., Tenelsen K., Gavrilenko V.I., and Bechstedt F. Phys. Rev. B 55 (1997) 1422
13. Cubiotti G., Kucherenko Yu.N., and Antonov V.N. J. Phys.: Condens. Matter 9 (1997) 165
14. Lüning J., Eisenbitt S., Rubensson J.E., Ellmers C., and Eberhardt W. Phys. Rev. B 59 (1999) 10573
15. Long J.P., Bermudez V.M., and Ramaker D.E. Phys. Rev. Lett. 76 (1996) 991
16. Glans P.-A., Balasubramanian T., Syväjärvi M., Yakimova R., and Johansson L.I. Surf. Sci. 470 (2001) 284
17. Ostendorf R., Benesch C., Hagedorn M., Merz H., and Zacharias H. Phys. Rev. B 66 (2002) 245401
18. Aristov V.Yu., Enriquez H., Derycke V., Soukiassian P., Le Lay G., Grupp C., and Taleb-Ibrahimi A. Phys. Rev. B 60 (1999) 16553
19. Yeom H.W., Chao Y.-C., Terada S., Hara S., Yoshida S., and Uhrberg R.I.G. Surf. Sci. 433 (1999) 392
20. Sieber N., Seyller Th., Graupner R., Ley L., Mikalo R., Hoffmann P., Batchelor D.R., and Schmeisser D. Appl. Surf. Sci. 184 (2001) 278
21. Soukiassian P., Semond F., Douillard L., Mayne A., Dujardin G., Pizzagalli L., and Joachim C. Phys. Rev. Lett. 78 (1997) 907
22. Owman F., and Mårtensson P. Surf. Sci. Lett. 330 (1995) L639
23. Starke U. Phys. Status Solidi (B) 202 (1997) 475
24. Stöhr J. NEXAFS Spectroscopy. In: Gomer R. (Ed). Series of Surface Sciences vol. 25 (1992), Springer-Verlag, Berlin
25. Goryachko A., Yemorenko Y., Henkel K., Wollweber J., and Schmeisser D. Phys. Status Solidi (A) 201 (2004) 245
26. Luk Y.-Y., Abbott N.L., Crain J.N., and Himpsel F.J. J. Chem. Phys. 120 (2004) 10792
27. Peters R.D., Nearley P.F., Crain J.N., and Himpsel F.J. Langmuir 18 (2002) 1250
28. Rost H.-J., Irmscher K., Doerschel J., Siche D., Schulz D., and Wollweber J. Mater. Sci. Forum 433-436 (2003) 91
29. Schmeisser D., Hoffmann P., and Beuckert G. In: Ehrenfried Z., Caroline W., and Thomas M. (Eds). Materials for Information Technology, Devices, Interconnects and Packaging. Series: Engineering Materials and Processes (2005), Springer. 1-85233-941-1
30. M. Tallarida, R. Sohal, D. Schmeisser, Surf. Sci., to be submitted.
31. Teo B.K., and Lee P.A. J. Am. Chem. Soc. 101 (1979) 2815