Surface reconstructions of 3C-SiC (001) studied by high-resolution core-level photoemission

Surface Science

Volumn 433-435, Issue , 1999, Pages 392-396

  Yeom, H W ^a,b   Chao, Y C ^a   Terada, S ^b   Hara, S ^b   Yoshida, S ^c   Uhrberg, R I G ^a  

^a LINKÖPING UNIVERSITY   (Sweden)

^b UNIVERSITY OF TOKYO   (Japan)

^c ELECTROTECHNICAL LABORATORY   (Japan)

Author keywords

Low index single crystal surface; Silicon carbide; Soft X ray photoelectron spectroscopy (using synchrotron radiation); Surface relaxation and reconstruction

Indexed keywords

BINDING ENERGY; ELECTRON ENERGY LEVELS; NUMERICAL METHODS; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; RELAXATION PROCESSES; SINGLE CRYSTALS; SURFACE STRUCTURE; SURFACE TREATMENT; SURFACES;

LOW INDEX SINGLE CRYSTAL SURFACE; SINGLE DOMINANT SURFACE COMPONENT; SURFACE CORE LEVELS; SURFACE RECONSTRUCTIONS; SURFACE RELAXATION;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0033347954     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(99)00463-X     Document Type: Article

References (13)

1. V.M. Bermudez, Phys. Status Solidi B 202 (1997) 407.
2. J. Pollmann et al., Phys. Status Solidi B 202 (1997) 421.
3. S. Hara, S. Misawa, S. Yoshida, Y. Aoyagi, Phys. Rev. B 50 (1994) 4548.
4. L. Douillard et al., Surf. Sci. 401 (1998) L395.
5. H.W. Yeom et al., Phys. Rev. B 56 (1997) R15 525.
6. P. Soukiassian et al., Phys. Rev. Lett. 78 (1997) 907.
7. M.L. Shek, Surf. Sci. 349 (1996) 317.
8. V.M. Bermudez, J.P. Long, Appl. Phys. Lett. 66 (1995) 475.
9. A. Catellani et al., Appl. Phys. Lett. 72 (1998) 1902.
10. S. Hara et al., in preparation.
11. H.W. Yeom et al., Phys. Rev. Lett., submitted for publication.
12. A. Catellani, G. Galli, F. Gygi, Phys. Rev. Lett. 77 (1996) 5090.
13. H.W. Yeom et al., in preparation.