Properties of Nitrogen-Doped 4H-SiC Single Crystals Grown by Physical Vapour Transport

Materials Science Forum

Volumn 433-436, Issue , 2003, Pages 91-94

  Rost, H J ^a   Irmscher, K ^a   Doerschel, J ^a   Siche, D ^a   Schulz, D ^a   Wollweber, J ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

Author keywords

Electrical Properties; Nitrogen Doping; Photoluminescence; SiC Bulk Growth; Stacking Faults

Indexed keywords

CATHODOLUMINESCENCE; PHOTOLUMINESCENCE; PHYSICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SILICON CARBIDE; STACKING FAULTS;

BULK GROWTH;

SINGLE CRYSTALS;

EID: 0242497055     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: None     Document Type: Conference Paper

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