Study of exciton dead layers in GaN Schottky diodes with N and Ga-face polarity

Physica Status Solidi (A) Applied Research

Volumn 194, Issue 2 SPEC., 2002, Pages 480-484

  Shokhovets, S ^a   Fuhrmann, D ^a   Goldhahn, R ^a   Gobsch, G ^a   Ambacher, O ^a   Hermann, M ^b   Karrer, U ^b  

^a ILMENAU UNIVERSITY OF TECHNOLOGY   (Germany)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; ELECTRIC FIELD EFFECTS; ENERGY GAP; EXCITONS; IONIZATION; MOLECULAR BEAM EPITAXY; NUCLEATION; PHOTOCURRENTS; REFLECTION; SCHOTTKY BARRIER DIODES; X RAY DIFFRACTION ANALYSIS;

BROADENING ENERGIES; DIELECTRIC FUNCTION; ELECTROREFLECTANCE; EXCITON DEAD LAYERS; POLARITY; SURFACE BAND BENDING;

GALLIUM NITRIDE;

EID: 0036962513     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200212)194:2<480::AID-PSSA480>3.0.CO;2-J     Document Type: Article

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