Dielectric properties and leakage current characterization of the Ba(SnxTi1-x)O3 thin films prepared by radio frequency magnetron sputtering

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 9 A, 2006, Pages 7002-7008

  Lin, Huey Jiuan ^a   Huang, Hong Hsin ^b   Chen, Chung Yuan ^c   Wu, Nan Chung ^c   Wang, Moo Chin ^d  

^a NATIONAL UNITED UNIVERSITY   (Taiwan)

^b CHENG SHIU UNIVERSITY   (Taiwan)

^c NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^d KAOHSIUNG MEDICAL UNIVERSITY   (Taiwan)

Author keywords

BSxT1 x thin film; Dielectric properties; Ferroelectric characteristics; Leakage current density; Sputter

Indexed keywords

CAPACITANCE; CURRENT DENSITY; ELECTRODES; LEAKAGE CURRENTS; MAGNETRON SPUTTERING; PERMITTIVITY; THIN FILMS;

BSXT1-X THIN FILMS; FERROELECTRIC CHARACTERISTICS; LEAKAGE CURRENT DENSITY;

BARIUM COMPOUNDS;

EID: 33749003975     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.7002     Document Type: Article

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