Ultra-shallow junction formation by excimer laser annealing of ultra-low energy B implanted in Si

Materials Research Society Symposium - Proceedings

Volumn 765, Issue , 2003, Pages 243-254

  Fortunato, G ^a   Mariucci, L ^a   Privitera, V ^b   La Magna, A ^b   Whelan, S ^b   Mannino, G ^b  

^a IFN CNR   (Italy)

^b CNR IMM   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BORON; DOPING (ADDITIVES); EXCIMER LASERS; ION IMPLANTATION; LASER PULSES; TRANSMISSION ELECTRON MICROSCOPY;

EXCIMER LASER ANNEALING; MELT DURATION; ULTRA SHALLOW JUNCTION FORMATION;

SEMICONDUCTING SILICON;

EID: 0242661413     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-765-d7.1     Document Type: Conference Paper

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