Control of transient enhanced diffusion of boron after laser thermal processing of preamorphized silicon

Journal of Applied Physics

Volumn 92, Issue 3, 2002, Pages 1344-1350

  Chong, Y F ^a   Pey, K L ^a   Wee, A T S ^a   Osipowicz, T ^a   See, A ^b   Chan, L ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS LAYER; CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY; DEFECT-FREE; END-OF-RANGE; END-OF-RANGE DAMAGES; INTERSTITIAL DEFECTS; INTERSTITIALS; LASER THERMAL PROCESSING; MELT DEPTH; MODERATELY HIGH TEMPERATURE; PRE-AMORPHIZED SILICON; TRANSIENT ENHANCED DIFFUSION; ULTRA SHALLOW JUNCTION;

ANNEALING; BORON; CRYSTAL DEFECTS; DIFFUSION; LASER HEATING; TRANSMISSION ELECTRON MICROSCOPY;

AMORPHOUS SILICON;

EID: 0036679084     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1491278     Document Type: Article

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