Homogeneous Si films on CaF2/Si(1 1 1) due to boron enhanced solid phase epitaxy

Surface Science

Volumn 600, Issue 18, 2006, Pages 3637-3641

  Wollschlager J ^a   Deiter, C ^a   Bierkandt, M ^b   Gerdes, A ^b   Baumer M ^c   Wang, C R ^b   Muller B H ^b   Hofmann, K R ^b  

^a UNIVERSITY OF OSNABRÜCK   (Germany)

^b LEIBNIZ UNIVERSITY HANNOVER   (Germany)

^c UNIVERSITY OF BREMEN   (Germany)

Author keywords

CaF2; Grazing incidence X ray diffraction; Molecular beam epitaxy; Multilayers; Silicon; Solid phase epitaxy; Surfactant

Indexed keywords

BORON; CALCIUM COMPOUNDS; CRYSTAL DEFECTS; CRYSTAL IMPURITIES; CRYSTALLINE MATERIALS; EPITAXIAL GROWTH; MOLECULAR BEAM EPITAXY; MORPHOLOGY; MULTILAYERS; SILICON; SURFACE ACTIVE AGENTS; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

CAF2; RESIDUAL DEFECTS; SILICON FILMS; SOLID PHASE EPITAXY;

SEMICONDUCTING FILMS;

EID: 33748940774     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2005.12.071     Document Type: Article

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