The carrier blocking effect on 850 nm InAlGaAs/AlGaAs vertical-cavity surface-emitting lasers

Semiconductor Science and Technology

Volumn 21, Issue 10, 2006, Pages 1488-1494

  Chang, Yi An ^a   Ko, Tsung Shine ^a   Chen, Jun Rong ^a,b   Lai, Fang I ^c   Yu, Chun Lung ^c   Wu, I Tsung ^c   Kuo, Hao Chung ^a   Kuo, Yen Kuang ^b   Laih, Li Wen ^d   Laih, Li Horng ^d   Lu, Tin Chang ^a   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^c CHING YUN UNIVERSITY   (Taiwan)

^d Millennium Communication Co Ltd   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONS; FREQUENCY RESPONSE; LASER BEAM EFFECTS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS; SPURIOUS SIGNAL NOISE;

CARRIER BLOCKING EFFECT; RELATIVE INTENSITY NOISE (RIN); VERTICAL-CAVITY SURFACE-EMITTING LAYERS (VCSEL);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33748867991     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/21/10/023     Document Type: Article

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