Vertical-cavity surface-emitting lasers (VCSELs) with high-power and single-spot far-field distributions at 850-nm wavelength by use of petal-shaped light-emitting apertures

IEEE Photonics Technology Letters

Volumn 18, Issue 3, 2006, Pages 481-483

  Shi, Jin Wei ^a   Yen, J L ^b   Jiang, C H ^a   Chen, K M ^c,d   Hung, T J ^a   Yang, Ying Jay ^c,d  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^b LEE MING INSTITUTE OF TECHNOLOGY   (Taiwan)

^c NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^d INSTITUTE OF PHYSICS   (Taiwan)

Author keywords

Semiconductor laser; Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

COHERENT LIGHT; FAST FOURIER TRANSFORMS; ION IMPLANTATION; LIGHT EMISSION; SEMICONDUCTOR DEVICE MANUFACTURE;

IN-PHASE LASING MODE; LIGHT-EMITTING APERTURE; VERTICAL-CAVITY SURFACE-EMITTING LASER;

SEMICONDUCTOR LASERS;

EID: 31344461905     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.863639     Document Type: Article

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