High temperature stability 850-nm In0.15Al0.08Ga 0.77As/Al0.3Ga0.7as vertical-cavity surface-emitting laser with single Al0.75Ga0.25As current blocking layer

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 44, Issue 28-32, 2005, Pages

  Chang, Yi An ^a   Lai, Fang I ^a   Yu, Hsin Chieh ^b   Kuo, Hao Chung ^a   Laih, Li Wen ^c   Yu, Chun Lung ^c   Wang, Shing Chung ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^c Department of Mechanical Engineering   (Taiwan)

Author keywords

850 nm; Current blocking layer; Leakage current; VCSEL

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; LASER BEAM EFFECTS; LEAKAGE CURRENTS; THERMODYNAMIC STABILITY; THRESHOLD ELEMENTS;

850 NM; CURRENT BLOCKING LAYER; VCSEL;

ALUMINUM COMPOUNDS;

EID: 30344478253     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.44.L901     Document Type: Article

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