GaN0.011P0.989-GaP double-heterostructure red light-emitting diodes directly grown on GaP substrates

IEEE Photonics Technology Letters

Volumn 12, Issue 8, 2000, Pages 960-962

  Xin, H P ^a   Welty, R J ^a   Tu, C W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BIPOLAR TRANSISTORS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SUBSTRATES;

ALUMINUM GALLIUM INDIUM PHOSPHIDE; DOUBLE HETEROSTRUCTURE; GALLIUM PHOSPHIDE; GAS SOURCE MOLECULAR BEAM EPITAXY;

LIGHT EMITTING DIODES;

EID: 0342572565     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/68.867974     Document Type: Article

References (9)

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