New observations on the damage relaxation mechanisms in p-MOSFETs under dynamic NBTI stressing

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2005, Pages 706-707

  Ang, D S ^a   Wang, S ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 28744454160     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)

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6. S. S. Chung et al., Symp. VLSI Tech. 2002, pp. 74-75.
7. C.E. Blat et al., J., Appl. Phys., vol. 69, pp. 1712-1720, 1991.