Two-dimensional bandgap engineering in a novel Si/SiGe pMOSFET with enhanced device performance and scalability

International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Volumn , Issue , 2000, Pages 151-154

  Ouyang, Q ^a   Chen, X D ^a   Mudanai, S ^a   Kencke, D L ^a   Wang, X ^a   Tasch, A F ^a   Register, L F ^a   Banerjee, S K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; DIELECTRIC MATERIALS; ELECTRIC CURRENTS; GATES (TRANSISTOR); SEMICONDUCTING SILICON; SEMICONDUCTOR QUANTUM WELLS;

SHORT-CHANNEL EFFECTS (SCE);

MOSFET DEVICES;

EID: 0033714121     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (18)