Imposed layer-by-layer growth with pulsed laser interval deposition

Applied Surface Science

Volumn 168, Issue 1-4, 2000, Pages 223-226

  Rijnders, Guus ^a   Koster, Gertjan ^a   Leca, Victor ^a   Blank, Dave H A ^a   Rogalla, Horst ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL GROWTH; CRYSTAL STRUCTURE; DEPOSITION; NUCLEATION; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION;

GROWTH MANIPULATION; PULSED LASER DEPOSITION;

PULSED LASER APPLICATIONS;

EID: 0034499139     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00602-4     Document Type: Article

References (6)

1. Koster G., Kropman B.L., Rijnders G., Blank D.H.A., Rogalla H. Appl. Phys. Lett. 73:1998;2920.
2. G. Rosenfeld, B. Poelsema, G. Comsa, in: D.A. King, D.P. Woodruff (Eds.), Growth and Properties of Ultrathin Epitaxial Layers, Elsevier, Amsterdam, 1997 (Chapter 3).
3. I.V. Markov, Crystal Growth for Beginners, World Scientific, London, 1995, pp. 81-86.
4. Koster G., Rijnders G., Blank D.H.A., Rogalla H. Appl. Phys. Lett. 74:1999;3729.
5. Rijnders G., Koster G., Blank D.H.A., Rogalla H. Appl. Phys. Lett. 70:1997;1888.
6. Rijnders G.J.H.M., Koster G., Blank D.H.A., Rogalla H. Mat. Sci. Eng. B. 56:1998;223.