-
2
-
-
0016049211
-
-
J. Maserjian, G. Petersson, and C. Svensson, Solid-State Electron., 17, 335 (1974).
-
(1974)
Solid-State Electron.
, vol.17
, pp. 335
-
-
Maserjian, J.1
Petersson, G.2
Svensson, C.3
-
3
-
-
0003520079
-
-
C. R. Helms and B. E. Deal, Editors, Plenum Press, New York
-
2 Interface, C. R. Helms and B. E. Deal, Editors, Plenum Press, New York (1988).
-
(1988)
2 Interface
-
-
Maserjian, J.1
-
4
-
-
0023995649
-
-
B. Rioco, P. Olivo, T. N. Nguyen, T.-S. Kuan, and G. Ferriani, IEEE Trans. Electron Devices, 35, 432 (1988).
-
(1988)
IEEE Trans. Electron Devices
, vol.35
, pp. 432
-
-
Rioco, B.1
Olivo, P.2
Nguyen, T.N.3
Kuan, T.-S.4
Ferriani, G.5
-
5
-
-
0034229035
-
-
K. Ahmad, E. Ibok, G. Bains, D. Chi, B. Ogle, J. J. Wortman, and J. R. Hauser, IEEE Trans. Electron Devices, 47, 1349 (2000).
-
(2000)
IEEE Trans. Electron Devices
, vol.47
, pp. 1349
-
-
Ahmad, K.1
Ibok, E.2
Bains, G.3
Chi, D.4
Ogle, B.5
Wortman, J.J.6
Hauser, J.R.7
-
6
-
-
0141935073
-
-
S. Kar, D. Misra, R. Singh, and F. Gonzalez, Editors, PV 2002-28, The Electrochemical Society Proceedings Series, Pennington, NJ
-
S. Kar and R. Singh, in Physics and Technology of High-k Gate Dielectrics 1, S. Kar, D. Misra, R. Singh, and F. Gonzalez, Editors, PV 2002-28, p. 13, The Electrochemical Society Proceedings Series, Pennington, NJ (2002).
-
(2002)
Physics and Technology of High-k Gate Dielectrics 1
, pp. 13
-
-
Kar, S.1
Singh, R.2
-
7
-
-
0141969838
-
-
S. Kar, D. Misra, R. Singh, and F. Gonzalez, Editors, PV 2002-28, The Electrochemical Society Proceedings Series, Pennington, NJ
-
K. P. Bastos, J. Morais, L. Miotti, G. V. Soares, R. P. Pezzi, H. Boudinov, I. J. R. Baumvol, R. I. Hegde, H. H. Tseng, and P. J. Tobin, in Physics and Technology of High-k Gate Dielectrics 1, S. Kar, D. Misra, R. Singh, and F. Gonzalez, Editors, PV 2002-28, p. 207, The Electrochemical Society Proceedings Series, Pennington, NJ (2002).
-
(2002)
Physics and Technology of High-k Gate Dielectrics 1
, pp. 207
-
-
Bastos, K.P.1
Morais, J.2
Miotti, L.3
Soares, G.V.4
Pezzi, R.P.5
Boudinov, H.6
Baumvol, I.J.R.7
Hegde, R.I.8
Tseng, H.H.9
Tobin, P.J.10
-
8
-
-
79956039125
-
-
M.-H. Cho, Y. S. Roh, C. N. Whang, K. Jeong, S. W. Nahm, D.-H. Ko, J. H. Lee, N. I. Lee, and K. Fujihara, Appl. Phys. Lett., 81, 472 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 472
-
-
Cho, M.-H.1
Roh, Y.S.2
Whang, C.N.3
Jeong, K.4
Nahm, S.W.5
Ko, D.-H.6
Lee, J.H.7
Lee, N.I.8
Fujihara, K.9
-
9
-
-
79955995737
-
-
M. Cho, J. Park, H. B. Park, C. S. Hwang, J. Jeong, and K. S. Hyun, Appl. Phys. Lett., 81, 334 (2002).
-
(2002)
Appl. Phys. Lett.
, vol.81
, pp. 334
-
-
Cho, M.1
Park, J.2
Park, H.B.3
Hwang, C.S.4
Jeong, J.5
Hyun, K.S.6
-
11
-
-
0034499916
-
-
H. Jung, K. Im, D. Yang, and H. Hwang, IEEE Trans. Electron Devices, 21, 563 (2000).
-
(2000)
IEEE Trans. Electron Devices
, vol.21
, pp. 563
-
-
Jung, H.1
Im, K.2
Yang, D.3
Hwang, H.4
-
13
-
-
0034217328
-
-
Y. H. Wu, M. Y. Yang, A. Chin, W. J. Chen, and C. M. Kwei, IEEE Trans. Electron Devices, 21, 341 (2000).
-
(2000)
IEEE Trans. Electron Devices
, vol.21
, pp. 341
-
-
Wu, Y.H.1
Yang, M.Y.2
Chin, A.3
Chen, W.J.4
Kwei, C.M.5
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