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Volumn 151, Issue 7, 2004, Pages

Determination of the gate dielectric capacitance of ultrathin high-k layers

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; ELECTRIC CURRENTS; LEAKAGE CURRENTS; MATHEMATICAL MODELS; SILICON; SUBSTRATES; ULTRATHIN FILMS;

EID: 3242721607     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1759699     Document Type: Article
Times cited : (3)

References (13)
  • 3
    • 0003520079 scopus 로고
    • C. R. Helms and B. E. Deal, Editors, Plenum Press, New York
    • 2 Interface, C. R. Helms and B. E. Deal, Editors, Plenum Press, New York (1988).
    • (1988) 2 Interface
    • Maserjian, J.1
  • 6
    • 0141935073 scopus 로고    scopus 로고
    • S. Kar, D. Misra, R. Singh, and F. Gonzalez, Editors, PV 2002-28, The Electrochemical Society Proceedings Series, Pennington, NJ
    • S. Kar and R. Singh, in Physics and Technology of High-k Gate Dielectrics 1, S. Kar, D. Misra, R. Singh, and F. Gonzalez, Editors, PV 2002-28, p. 13, The Electrochemical Society Proceedings Series, Pennington, NJ (2002).
    • (2002) Physics and Technology of High-k Gate Dielectrics 1 , pp. 13
    • Kar, S.1    Singh, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.