Hard error dose distributions of gate oxide arrays in the laboratory and space environments

IEEE Transactions on Nuclear Science

Volumn 43, Issue 6 PART 1, 1996, Pages 3139-3144

  Xapsos, Michael A ^a  

^a NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIGITAL STORAGE; PROTONS; RADIATION EFFECTS; SPACE APPLICATIONS; STATISTICAL METHODS;

GATE OXIDES;

GATES (TRANSISTOR);

EID: 0030362541     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.556917     Document Type: Article

References (15)

1. C. Poivey, T. Carrière, J. Beauoour and T. R. Oldham, Characterization of Single Hard Errors (SHE) in 1 M-bit SRAMs from Single Ion, IEEE Trans. Nucl. Sei. 41, 2235-2239 (1994).
2. T. R. Oldham, K. W. Bennett, J. Beaucour, T. Carrière, C. Poivey and P. Gamier, Total Dose Failures in Advanced Electronics from Single Ions, IEEE Trans. Nucl. Sei. 40, 1820-1830 (1993).
3. M. R. Shaneyfelt, P. S. Winokur, T. L. Meisenheimer, F. W. Sexton, S. B. Roeske and M. G. Knoll, Hardness Variability in Commercial Technologies, IEEE Trans. Nucl. Sei. 41, 2536-2543 (1994).
4. A. M. Kellerer, Fundamentals of Microdosimetry. In The Dosimetry of Ionizing Radiation (K. R. Kase et al. Eds. ), Vol. 1, pp. 77-162 (Academic Press, NY, 1985).
5. PJ. Vail and E. A. Burke, Fundamental Limits Imposed by Gamma Dose Fluctuations in Scaled MOS Gate Insulators, IEEE Trans. Nucl. Sei. 31, 1411-1416 (1984).
6. R. Gaillard and G. Poirault, Numerical Simulation of Hard Errors Induced by Heavy Ions in 4T High Density SRAM Cells, IEEE Trans. Nucl. Sei. 41, No. 3, 613-618 (1994).
7. E. Gumbel, Statistics of Extremes (Columbia U. Press, NY, 1958).
8. A. H-S. Ang and W. H. Tang, Probability Concepts in Engineering Planning and Design, Vol. 11, John Wiley & Sons, New York, 1985.
9. D. M. Fleetwood, P. V. Dressendorfer and D. C. Turpin, A Réévaluation of Worst-Case Postirradiation Response for Hardened MOS Transistors, IEEE Trans. Nucl. Sei. 34, 1178-1183 (1987).
10. M. A. Xapsos, E. A. Burke, P. Shapiro and G. P. Summers, Energy Deposition and lonization Fluctuations Induced by Ions in Small Sites - An Analytical Approach, Radiât. Res. 137, 152-161 (1994).
11. M. R. Shaneyfelt, D. M. Fleetwood, J. R. Schwank and K. L. Hughes, Charge Yield for Cobalt-60 and 10-keV X-ray Irradiations of MOS Devices, IEEE Trans. Nucl. Sei. 38, 1187-1194 (1991).
12. T. R. Oldham and J. M. McGarrity, lonization of SiO2 by Heavy Charged Particles, IEEE Trans. Nucl. Sei. 28, 3975-3980 (1981).
13. M. A. Xapsos, E. L. Petersen, H. E. Boesch, P. W. Marshall and A. Scott, The Response of Radiation Hardened MOS Transistors to Protons and Co-60, J. Radiât. Eff. Res. and Eng. 8, No. 2, 6-9 (1990).
14. T. R. Oldham, Analysis of Damage in MOS Devices for Several Radiation Environments, IEEE Trans. Nucl. Sei. 31, 1236-1241 (1984).
15. J. M. Benedetto and H. E. Boesch, Jr. , The Relationship Between Co-60 and 10-keV X-ray Damage in MOS Devices, IEEE Trans. Nucl. Sei. 33, 1318-1323 (1986).