Study of an SOI SRAM sensitivity to SEU by 3-D device simulation

IEEE Transactions on Nuclear Science

Volumn 51, Issue 5 III, 2004, Pages 2799-2804

  Castellani Coulie K ^a   Sagnes, B ^b   Saigne F ^b   Palau, J M ^b   Calvet, M C ^c   Dodd, P E ^d   Sexton, F W ^d  

^a AIX MARSEILLE UNIVERSITY   (France)

^b UNIVERSITÉ MONTPELLIER II   (France)

^c AIRBUS GROUP INNOVATIONS   (Germany)

^d SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

Sensitive regions; Silicon on insulator (SOI); Single event upset (SEU); Static random access memory (SRAM)

Indexed keywords

COMPUTER SIMULATION; ELECTRIC INVERTERS; ENERGY GAP; ION BOMBARDMENT; OXIDES; STATIC RANDOM ACCESS STORAGE; SUBSTRATES;

DRAIN CURRENT; LINEAR ENERGY TRANSFER (LET); SENSITIVE REGIONS; SINGLE EVENT UPSET (SEU);

SILICON ON INSULATOR TECHNOLOGY;

EID: 8344290584     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2004.835076     Document Type: Article

References (9)

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