Possibility of subelectron noise with room-temperature silicon carbide pixel detectors

IEEE Transactions on Nuclear Science

Volumn 53, Issue 4, 2006, Pages 2421-2427

  Bertuccio, Giuseppe ^a   Caccia, Stefano ^a   Casiraghi, Roberto ^a,b   Lanzieri, Claudio ^c  

^a POLITECNICO DI MILANO   (Italy)

^b STMICROELECTRONICS   (Italy)

^c Selex Integrated Systems SpA   (Italy)

Author keywords

Schottky junctions; Semiconductor detectors; Silicon carbide; X ray detectors

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT DENSITY; ELECTRONS; LEAKAGE CURRENTS; SILICON CARBIDE;

PIXEL CAPABILITIES; SCHOTTKY JUNCTIONS; SEMICONDUCTOR DETECTORS; X-RAY DETECTORS;

RADIATION DETECTORS;

EID: 33748341712     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2006.877860     Document Type: Conference Paper

References (29)

1. N. Wermes, "Trends in pixel detectors: Tracking and imaging," IEEE Trans. Nucl. Sci., vol. 51, no. 3, pp. 1006-1015, Jun. 2004.
2. C. Erd and A. Owens, Nucl. Instrum. Meth. Phys. Res. A, vol. 487, pp. 78-89, 2002.
3. S. R. Amendolia et al., "A prototype for a mammographic head and related development," Nucl. Instrum. Meth. Phys. Res. A, vol. 518, pp. 382-385, 2004.
4. T. Takahashi et al., "High-resolution cdte detector and applications to imaging devices," IEEE Trans. Nucl. Sci., vol. 48, no. 3, pp. 287-291, Jun. 2004.
5. C. M. H. Chen, W. R. Cook, F. A. Harrison, and J. Y. Y. Lin, "Characterisation of a large-format, fine-pitch CdZnTe pixel detector for heft balloon-borne experiment," IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 2472-2477, Oct. 2004.
6. M. S. Alam et al., "The atlas silicon pixel sensors," Nucl. Instrum. Meth., vol. A456, pp. 217-232, 2001.
7. L. Blanquart et al., "FE-12: A front-end readout chip designed in a commercial 0.25-μm process for the ATLAS pixel detector at LHC," IEEE Trans. Nucl. Sci., vol. 51, no. 4, pp. 1358-1364, Aug. 2004.
8. M. Turqueti et al., "Study of temperature dependence of bump bonding for the BTeV pixel detector," IEEE Trans. Nucl. Sci., vol. 51, no. 5, pp. 2161-2167, Oct. 2004.
9. J. A. Cooper and A. Agarwal, "SiC power-switching devices - The second electronics revolution?," Proc. IEEE, vol. 90, no. 6, pp. 956-968, Jun. 2002.
10. "Number dedicated to silicon carbide," IEEE Trans. Electron Devices, vol. 46, no. 3, Mar. 1999.
11. L. Lorenz, G. Deboy, and I. Zverev, "Matched pair of coolmos transistor with sic-schottky diode-advantages in application," IEEE Trans. Ind. Appl., vol. 40, no. 5, pp. 1265-1272, May 2004.
12. A. R. Dulloo, F. H. Seidel, J. G. Ruddy, C. Davison, T. Flinchbaugh, and T. Daubenspeck, "Simultaneous measurement of neutron and gamma-ray radiation levels from a TRIGA reactor core using silicon carbide semiconductor detectors," IEEE Trans. Nucl. Sci., vol. 46, no. 3, pp. 275-279, Jun. 1999.
13. F. Nava, P. Vanni, M. Bruzzi, S. Lagomarsino, S. Sciortino, G. Wagner, and C. Lanzieri, "Minimum ionizing and alpha particles detectors based on epitaxial semiconductor silicon carbide," IEEE Trans. Nucl. Sci., vol. 51, no. 1, pp. 238-244, Feb. 2004.
14. G. Bertuccio and R. Casiraghi, "Study of silicon carbide for X-ray detection and spectroscopy," IEEE Trans. Nucl. Sci., vol. 50, no. 1, pp. 175-185, Feb. 2003.
15. E. Gatti, P. F. Manfred, M. Sampietro, and V. Speziali, "Suboptimal filtering of 1/f-noise in detector charge measurements," Nucl. Instrum. Meth. Phys. Res. A, vol. 297, pp. 467-477, 1990.
16. D. H. Lumb and A. D. Holland, "Background rejection techniques in CCD X-Ray detectors for astronomy," IEEE Trans. Nucl. Sci., vol. 35, no. 1, pp. 534-538, Jan. 1988.
17. G. Bertuccio, R. Casiraghi, D. Maiocchi, A. Owens, M. Bavdaz, A. Peacock, H. Andersson, and S. Nenonen, "Noise analysis of gallium arsenide X-ray pixel detectors coupled to ultra low noise electronics," IEEE Trans. Nucl. Sci., vol. 50, no. 3, pp. 723-728, Jun. 2003.
18. Phlips et al., "Silicon carbide PiN diodes as radiation detectors," in 2005 IEEE Nuclear Science Symp. Conf. Rec., Oct. 23-29, 2005, vol. 3, pp. 1236-1239.
19. S. M. Sze, Physics of Semiconductor Devices, 2nd ed. New York: Wiley, 1981, cap.5.
20. B. E. Burke et al., "Soft X-ray CCD imagers for AXAF," IEEE Trans. Electron Devices, vol. 44, no. 10, pp. 1633-1642, Oct. 1997.
21. N. Wermer et al., "New results on DEPFET pixel detectors for radiation imaging and high energy particle detection," IEEE Trans. Nucl. Sci., vol. 51, no. 3, pp. 1121-1128, Jun. 2004.
22. G. Bertuccio et al., "Silicon Carbide for high resolution X-ray detectors operating up to 100°C," Nucl. Instrum. Meth. Phys. Res. A, vol. 522, pp. 413-419, 2004.
23. D. Lee et al., "Gate oxide leakage current analysis and reduction for VLSI circuits," IEEE Trans. Very Large Scale. Integr. (VLSI) Syst., vol. 12, no. 2, pp. 155-166, Feb. 2004.
24. L. Fasoli and M. Sampietro, "criteria for setting the width of CCD front end transistor to reach minimum pixel noise," IEEE Trans. Electron Devices, vol. 43, no. 7, pp. 1073-1076, Jul. 1996.
25. P. O'Connor et al., "Ultra low noise CMOS preamplifier-shaper for X-ray spectroscopy," Nucl. Instrum. Meth. Phys. Res. A 409, pp. 315-321, 1998.
26. G. De Geronimo et al., "Development of High-Rate High-Resolution Detector for EXAFS Experiments," IEEE Trans. Nucl. Sci., vol. 50, no. 4, pp. 885-891, Aug. 2003.
27. B. Krieger et al., "An 8×8 Pixel IC for X-Ray Spectroscopy," IEEE Trans. Nucl. Sci., vol. 48, no. 3, pp. 493-498, Jun. 2001.
28. T. O. Tumer etal., "Preliminary test results of pixel detectors developed for all-sky & gamma-ray astronomy monitor (AXGAM)," IEEE Trans. Nucl. Sci., vol. 47, no. 4, pp. 1938-1944, Dec. 2000.
29. W. R. Cook et al., "High resolution CdZnTe pixel detector with VLSI readout," IEEE Trans. Nucl. Sci., vol. 47, no. 6, pp. 1454-1457, Aug. 2000.