High-resolution CdTe detector and applications to imaging devices

IEEE Transactions on Nuclear Science

Volumn 48, Issue 3 I, 2001, Pages 287-291

  Takahashi, Tadayuki ^a,b   Watanabe, Shin ^a,b   Kouda, Manabu ^a,b   Sato, Goro ^a,b   Okada, Yuu ^b   Kubo, Shin ^c   Kuroda, Yoshikatsu ^d   Onishi, Mitsunobu ^e   Ohno, Ryoichi ^f  

^a JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

^c Clear Pulse Ltd   (Japan)

^d MITSUBISHI HEAVY INDUSTRIES LTD   (Japan)

^e Daiichi System Engineering Co Ltd   (Japan)

^f Acrorad Co Ltd   (Japan)

Author keywords

CdTe; CdZnTe; Pixel detector

Indexed keywords

CADMIUM ALLOYS; ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; GAMMA RAYS; IMAGING SYSTEMS; LEAKAGE CURRENTS; PHOTONS; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR JUNCTIONS;

SCOTTKY JUNCTIONS;

RADIATION DETECTORS;

EID: 0035355220     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/23.940067     Document Type: Conference Paper

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