Temperature dependence of the thermal conductivity and phonon scattering time of a bulk GaN crystal

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 41, Issue 8, 2002, Pages 5034-5037

  Kamano, Masaru ^a,b   Haraguchi, Masanobu ^a   Niwaki, Takahiro ^a   Fukui, Masuo ^a   Kuwahara, Minoru ^a   Okamoto, Toshihiro ^a   Mukai, Takashi ^a  

^a UNIVERSITY OF TOKUSHIMA   (Japan)

^b NICHIA CORPORATION   (Japan)

Author keywords

GaN; Phonon scattering time; Phonon defect scattering; Phonon phonon scattering; Photothermal spectroscopy; Thermal conductivity

Indexed keywords

CRYSTALS; ELECTROMAGNETIC WAVE SCATTERING; GALLIUM NITRIDE; PHONONS; SPECTROSCOPIC ANALYSIS; THERMAL CONDUCTIVITY;

PHOTOTHERMAL DIVERGENCE (PTD);

LIGHT EMITTING DIODES;

EID: 0036698521     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.41.5034     Document Type: Article

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