Impurity bound polaron in wurtzite GaN/AlN quantum wells: The interface optical-phonon and the built-in electric field effects

Superlattices and Microstructures

Volumn 40, Issue 3, 2006, Pages 180-190

  Liu, Dong ^a   Shi, Jun jie ^a   Butcher, K S A ^b  

^a PEKING UNIVERSITY   (China)

^b MACQUARIE UNIVERSITY   (Australia)

Author keywords

Bound polaron; Built in electric field; Electron phonon interaction; Wurtzite GaN AlN quantum wells

Indexed keywords

ALUMINUM NITRIDE; ELECTRIC FIELD EFFECTS; GALLIUM NITRIDE; IONIZATION; PHONONS; POLARONS;

BOUND POLARON; BUILT-IN ELECTRIC FIELD; ELECTRON-PHONON INTERACTION; WURTZITE GAN/ALN QUANTUM WELLS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 33748089015     PISSN: 07496036     EISSN: 10963677     Source Type: Journal    
DOI: 10.1016/j.spmi.2006.07.015     Document Type: Article

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