Characterization of the Inverse-Narrow-Width Effect

IEEE Transactions on Electron Devices

Volumn 34, Issue 12, 1987, Pages 2476-2484

  Akers, Lex A ^a   Sugino, Michael ^b   Ford, Jenny M ^b  

^a ARIZONA STATE UNIVERSITY   (United States)

^b MOTOROLA INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC MEASUREMENTS - MATHEMATICAL MODELS;

ENHANCED SIDEWALL POTENTIAL AND CURRENT; FULLY RECESSED ISOLATION OXIDES; INVERSE-NARROW-WIDTH EFFECT; SIDEWALL INTERFACE CHARGE;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023559188     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.23338     Document Type: Article

References (11)

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3. L. A. Akers, “An analytical expression for the threshold voltage o a small-geometry MOSFET,” Solid-State Electron., vol. 24, p. 621 1981.
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6. T. Tsuchiya and J. Frey, “Relationship between hot-electron holes and degradation of p- and n-channel MOSFET's,” IEEE Electron Device Lett., vol. EDL-6, p. 8, 1985.
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8. M. Sugino, and L. A. Akers, “Subthreshold currents in oxide isolated structures,” IEEE Electron Device Lett., vol. EDL-4, p. 114, 1983.
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10. L. A. Akers, M. Beguwala, and f. Custode, “A model of a narrow-width MOSFET including tapered oxide and doping encroachment,” IEEE Trans. Electron Devices, vol. ED-28, p. 1490, 1981.
11. L. A. Akers and K. Hsueh, “A three-dimensional MOSFET simulator,” SIAM Tech. Abstr., p. 22A, 1985.