Three-Dimensional Analytical Subthreshold Models for Bulk MOSFET's

IEEE Transactions on Electron Devices

Volumn 42, Issue 12, 1995, Pages 2-2180

  Agrawal, Bhavna ^a   De, Vivek K ^a   Meindl, James D ^a  

^a RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATES (TRANSISTOR); SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR DOPING; VOLTAGE MEASUREMENT;

POTENTIAL PERTURBATION; SUBTHRESHOLD CONDUCTION; THRESHOLD VOLTAGE;

MOSFET DEVICES;

EID: 0029517987     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.477776     Document Type: Article

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