The Inverse-Narrow-Width Effect

IEEE Electron Device Letters

Volumn 7, Issue 7, 1986, Pages 419-421

  Akers, Lex A ^a  

^a ARIZONA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

FULLY RECESSED ISOLATION OXIDE; INVERSE-NARROW-WIDTH EFFECT; P-CHANNEL DEVICES; SMALL-GEOMETRY MOSFET; THRESHOLD VOLTAGE REDUCTION;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0022754389     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/EDL.1986.26422     Document Type: Article

References (9)

1. L. A. Akers and J. J. Sanchez, “Threshold voltage models of short, narrow, and small geometry MOSFET’s: A review,” Solid-State Electron., vol. 25, pp. 621–641, 1982.
2. L. A. Akers, An analytical expression for the threshold voltage of a small geometry MOSFET,” Solid-State Electron., vol. 24. pp. 621–627, 627, 1981.
3. L. A. Akers, M. M. Beguwala, and F. Z. Custode, “A model of a narrow-width MOSFET including tapered oxide and doping encroachment,” IEEE Trans. Electron Devices, vol. ED-28, pp. 1490–1495, 1981.
4. M. Sugino and L. A. Akers, “Subthreshold currents in oxide isolated structures,” IEEE Electron Device Lett., vol. EDL-4, p. 114, 1983.
5. N. Shigyo, M. Konaka, and R. L. M. Dang, “Three dimensional simulation of inverse narrow-channel effect,” ‘ Electron. Lett., vol. 18, no. 6, p. 274, 1982.
6. L. A. Akers and K. Hsueh, “A three-dimensional MOSFET simulator,” SIAM Tech. Abstr., p. 22A, 1985.
7. M. Sugino, L. A. Akers, and J. M. Ford, “Optimum p-channel isolation structure for CMOS,” IEEE Trans. Electron Devices, vol. ED-31, pp. 1823–1829, 1984.
8. M. Spiegel, Theory and Problems of Complex Variables. New York: McGraw-Hill, 1964.
9. L. D. Yau, “A simple theory to predict the threshold voltage of shortchannel channel IGFET’s,” Solid-State Electron., vol. 16, p. 1059, 1974.