Fabrication of self-defined gated field emission devices on silicon substrates using PECVD-grown carbon nano-tubes

Carbon

Volumn 44, Issue 13, 2006, Pages 2797-2803

  Koohsorkhi, J ^a   Abdi, Y ^a   Mohajerzadeh, S ^a   Hosseinzadegan, H ^a   Komijani, Y ^a   Soleimani, E Asl ^a  

^a Nano Electronic and Thin Film laboratory   (Iran)

Author keywords

Carbon nanotubes; Electric properties; Field emission; Plasma deposition

Indexed keywords

CARBON NANOTUBES; CATALYSTS; DEPOSITION; ELECTRIC PROPERTIES; NICKEL; PLASMAS; SILICON; SUBSTRATES; TRANSISTORS;

CATHODE ELECTRODE; EMISSION CURRENT; FIELD EMISSIONS; PLASMA DEPOSITION;

FIELD EMISSION DISPLAYS;

EID: 33747803617     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2006.03.038     Document Type: Article

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