Atmospheric pressure chemical vapor deposition of titanium dioxide films from TiCl4

Materials Science and Engineering: B

Volumn 109, Issue 1-3, 2004, Pages 17-23

  Arvan, B ^a,b   Khakifirooz, A ^a   Tarighat, R ^a   Mohajerzadeh, S ^a   Goodarzi, A ^a   Soleimani, E Asl ^a   Arzi, E ^a  

^a Nano Electronic and Thin Film laboratory   (Iran)

^b UNIVERSITY OF TEHRAN   (Iran)

Author keywords

Bubbler; Chemical vapor deposition; H2O2; Low temperature; Permittivity; Silicon; TiCl4

Indexed keywords

ATMOSPHERIC PRESSURE; CHEMICAL VAPOR DEPOSITION; LAYERED MANUFACTURING; PERMITTIVITY MEASUREMENT; SCANNING ELECTRON MICROSCOPY; SILICON WAFERS; SURFACE ROUGHNESS; TEMPERATURE CONTROL; TITANIUM OXIDES; X RAY DIFFRACTION ANALYSIS;

BUBBLER; FTIR ANALYSIS; H2O2; LOW TEMPERATURE; TICL4; TITANIUM OXIDE FILMS;

METALLIC FILMS;

EID: 2342568993     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.10.119     Document Type: Conference Paper

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