Degradation of electrical performance and floating body effect in ultra thin gate oxide FD-SOI n-MOSFETS by 7.5-MeV proton irradiation

Microelectronics Reliability

Volumn 44, Issue 9-11 SPEC. ISS., 2004, Pages 1721-1726

  Hayama, K ^a   Takakura, K ^a   Ohyama, H ^a   Mercha, A ^b   Simoen, E ^b   Claeys, C ^b,c   Rafi, J M ^d   Kokkoris, M ^e  

^a KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^b IMEC   (Belgium)

^c UNIVERSITY OF LEUVEN   (Belgium)

^d UNIVERSITAT AUTÒNOMA DE BARCELONA   (Spain)

^e INSTITUTE OF NANOSCIENCE AND NANOTECHNOLOGY   (Greece)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CONSTRAINT THEORY; ELECTRIC PROPERTIES; IONIZATION; PROTON IRRADIATION; SENSITIVITY ANALYSIS; SILICON ON INSULATOR TECHNOLOGY; ULTRATHIN FILMS;

CHANNEL TRANSISTORS; FLOATING BODY; GATE CURRENT; ULTRATHIN GATE OXIDES;

MOSFET DEVICES;

EID: 4544340420     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.07.063     Document Type: Conference Paper

References (10)

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