Influence of oxygen, hydrogen, helium, argon and vacuum on the surface behavior of molten InSb, other semiconductors, and metals on silica

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 319-333

  Kota, Arun K ^a   Anand, Gaurav ^a   Ramakrishnan, Suresh ^a   Regel, Liya L ^a   Wilcox, William R ^a  

^a CLARKSON UNIVERSITY   (United States)

Author keywords

A1. Contact angle; A1. Surface tension; A2. Growth from melt; B1. Metals; B2. Semiconducting materials

Indexed keywords

ADHESION; ARGON; CONTACT ANGLE; FUSED SILICA; HELIUM; HIGH TEMPERATURE EFFECTS; HYDROGEN; INTERFACIAL ENERGY; OXYGEN; SURFACE TENSION; VACUUM APPLICATIONS;

GROWTH FROM MELT; MOLTEN INDIUM ANTIMONIDE; SESSILE-DROP RESULT; SOLID OXIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 33747782972     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.01.044     Document Type: Article

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