Effect of the oxygen partial pressure on the surface tension of molten silicon and its temperature coefficient

ISIJ International

Volumn 40, Issue SUPPL., 2000, Pages

  Mukai, Kusuhiro ^a   Yuan, Zhangfu ^a   Nogi, Kiyoshi ^b   Hibiya, Taketoshi ^c  

^a KYUSHU INSTITUTE OF TECHNOLOGY   (Japan)

^b OSAKA UNIVERSITY   (Japan)

^c NEC CORPORATION   (Japan)

Author keywords

Molten silicon; Oxygen partial pressure; Saturation; Sessile drop method; Surface tension; Temperature coefficient

Indexed keywords

EID: 0001754494     PISSN: 09151559     EISSN: None     Source Type: Journal    
DOI: 10.2355/isijinternational.40.suppl_s148     Document Type: Article

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