Bridgman growth of detached GeSi crystals

Journal of Crystal Growth

Volumn 237-239, Issue 1 4 III, 2002, Pages 1844-1848

  Volz, M P ^a   Schweizer, M ^a   Kaiser, N ^b   Cobb, S D ^a   Vujisic, L ^c   Motakef, S ^c   Szofran, F R ^a  

^a NASA MARSHALL SPACE FLIGHT CENTER   (United States)

^b UNIVERSITY OF FREIBURG   (Germany)

^c Cape Simulations   (United States)

Author keywords

A2. Bridgman technique; A2. Detached growth; A2. Growth from melt; B2. Germanium silicon

Indexed keywords

ELECTRON MICROSCOPY; HYDROSTATIC PRESSURE; OPTICAL MICROSCOPY; PROFILOMETRY; SEMICONDUCTING GERMANIUM COMPOUNDS; SURFACE ROUGHNESS;

BRIDGMAN TECHNIQUE;

CRYSTAL GROWTH FROM MELT;

EID: 0036530999     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)02199-6     Document Type: Article

References (12)