Intervalenceband and plasmon optical absorption in heavily doped GaAs:C

Journal of Applied Physics

Volumn 91, Issue 1, 2002, Pages 171-177

  Songprakob, W ^a   Zallen, R ^a   Tsu, D V ^b   Liu, W K ^c  

^a VIRGINIA POLYTECHNIC INSTITUTE AND STATE UNIVERSITY   (United States)

^b Energy Conversion Devices Inc   (United States)

^c IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION PROCESS; DIELECTRIC FUNCTIONS; GAAS; HEAVILY DOPED; MULTILAYER STRUCTURES; OPTICAL ABSORPTION COEFFICIENTS; P-TYPE GAAS; PHOTON ENERGY;

GALLIUM ARSENIDE; LIGHT ABSORPTION; MOLECULAR BEAM EPITAXY; MULTILAYER FILMS; OPTICAL PROPERTIES; PLASMONS; SEMICONDUCTING GALLIUM; SEMICONDUCTOR DOPING;

HOLE MOBILITY;

EID: 0036137269     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1424050     Document Type: Article

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