Properties of a-Si:H films grown using hot wire-ECR plasma techniques

Thin Solid Films

Volumn 430, Issue 1-2, 2003, Pages 91-94

  Dalal, Vikram L ^a,b   Seberger, Paul ^a   Ring, Matt ^a   Sharma, Puneet ^a  

^a Iowa State University   (United States)

^b NONE   (United States)

Author keywords

Amorphous Si; ECR plasma; Hot wire deposition; Ion bombardment

Indexed keywords

CRYSTAL GROWTH FROM MELT; ELECTRONIC PROPERTIES; HIGH TEMPERATURE EFFECTS; HYDROGEN BONDS; ION BOMBARDMENT; OPTICAL PROPERTIES; PLASMAS; SILANES;

HOT WIRE DEPOSITION;

THIN FILMS;

EID: 0038188579     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00079-8     Document Type: Conference Paper

References (8)

1. Molenbroek E., Mahan A., Gallagher A. J. Appl. Phys. 82:1909;1997.
2. Dalal V.L. Thin Solid Films. 395:2001;173.
3. Gallagher A. J. Appl. Phys. 63:1988;2406.
4. Matsuda A., Nomoto K., Takeuchi Y., Suzuki A., Perrin J. Surf. Sci. 22:1990;50.
5. Perrin J. Brunno G., Capezzuto P., Madan A. Plasma Deposition of a-Si materials. 1995;Academic, San Diego. p. 216.
6. V.L. Dalal, Curr. Opinion Solid State (2002), submitted for publication.
7. Dalal V.L., Kaushal S., Girvan R. J. Non-Crystalline Solids. 198-200:1996;1101.
8. Kessels W.M.M., Smets A.H.M., Korevaar B.A., Andriaenssens C.J., van de Sanden M.C.M., Schramm D.C. Proc. Mater. Res. Soc. 557:1999;25.