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Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn 2005, Issue , 2005, Pages 192-195

Modelling of INP HEMTS with high indium content channels

(4) Kalna, K a Elgaid, K a Thayne, I a Asenov, A a

a UNIVERSITY OF GLASGOW (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRON TRANSPORT PROPERTIES; MATHEMATICAL MODELS; MONTE CARLO METHODS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE;

HIGH INDIUM CONTENT CHANNELS; MONTE CARLO DEVICE SIMULATORS;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33747444606 PISSN: 10928669 EISSN: None Source Type: Conference Proceeding
DOI: 10.1109/ICIPRM.2005.1517454 Document Type: Conference Paper

Times cited : (10)

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