InAlAs-InGaAs double-gate HEMTs on transferred substrate

IEEE Electron Device Letters

Volumn 25, Issue 6, 2004, Pages 354-356

  Wichmann, N ^a   Duszynski, I ^a   Wallart, X ^a   Bollaert, S ^a   Cappy, A ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

High electron mobility transistors (HEMTs); InP; Maximum oscillation frequency; Transferred substrate

Indexed keywords

OSCILLATIONS; SEMICONDUCTING GALLIUM ARSENIDE; SUBSTRATES; TRANSCONDUCTANCE;

INDIUM ALUMINIDE ARSENIDE; TRANSFERRED SUBSTRATE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2942741319     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.829029     Document Type: Letter

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