InP etching using chemically assisted ion beam etching (Cl2/Ar). Formation of InClx clusters under high concentration of chlorine

Journal of the Electrochemical Society

Volumn 146, Issue 5, 1999, Pages 1918-1920

  Lamontagne, B ^a   Stapledon, J ^a   Chow Chong, P ^a   Buchanan, M ^a   Fraser, J ^a   Phillips, J ^a   Davies, M ^a  

^a NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; CHLORINE; COALESCENCE; ETCHING; ION BEAMS; SUBSTRATES; SURFACE ROUGHNESS;

INDIUM CHLORIDE; ION BEAM ETCHING;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032655143     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1391865     Document Type: Article

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