Fabrication of two-dimensional InP photonic band-gap crystals by reactive ion etching with inductively coupled plasma

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 36, Issue 12 SUPPL. B, 1997, Pages 7763-7768

  Fujiwara, Yasufumi ^a   Kikuchi, Koji ^a   Hashimoto, Masayuki ^a   Hatate, Hitoshi ^a   Imai, Toshiaki ^a   Takeda, Yoshikazu ^a   Nakano, Hirohiko ^b   Honda, Masahiro ^b   Tatsuta, Toshiaki ^b   Tsuji, Osamu ^b  

^a NAGOYA UNIVERSITY   (Japan)

^b 33 Tanakamiya cho Takeda F   (Japan)

Author keywords

Fourier transformed infrared reflection absorption spectrometry; Inductively coupled plasma; InP; Photonic band gap crystal; Reactive ion etching

Indexed keywords

COMPOSITION EFFECTS; CRYSTALS; ENERGY GAP; NITROGEN OXIDES; PLASMA APPLICATIONS; REACTIVE ION ETCHING; SPECTROMETRY; SUBSTRATES;

FOURIER TRANSFORM INFRARED REFLECTION ABSORPTION SPECTROMETRY; INDUCTIVELY COUPLED PLASMA (ICP) CHEMISTRY; PHOTONIC BAND GAP CRYSTALS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 5244283280     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.36.7763     Document Type: Article

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