ToF-SIMS and AFM studies of low-k dielectric etching in fluorocarbon plasmas

Applied Surface Science

Volumn 252, Issue 19, 2006, Pages 7186-7189

  Lazzeri, P ^a   Hua, X ^b   Oehrlein, G ^b   Iacob, E ^a   Barozzi, M ^a   Bersani, M ^a   Anderle, M ^a  

^a ITC IRST   (Italy)

^b UNIVERSITY OF MARYLAND   (United States)

Author keywords

AFM; Dielectric; Etching; Low k; Porosity; ToF SIMS

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; ETCHING; FLUORINE CONTAINING POLYMERS; PLASMAS; POROSITY; SURFACE ROUGHNESS;

FLUOROETHERS; LOW-K; TOF-SIMS;

FLUOROCARBONS;

EID: 33747204617     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2006.02.104     Document Type: Article

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