Static-state model of NPT-IGBTs with localized lifetime control

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 27, Issue 5, 2006, Pages 857-863

  Fang, Jian ^a   Jiang, Huaping ^a   Qiao, Ming ^a   Zhang, Bo ^a   Li, Zhaoji ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Conductivity modulation; Forward voltage drops; Localized lifetime control; NPT IGBT

Indexed keywords

COMPUTER SIMULATION; CONTROL; ELECTRIC CONDUCTIVITY; MATHEMATICAL MODELS; MODULATION; SERVICE LIFE;

CONDUCTIVITY MODULATION; FORWARD VOLTAGE DROPS; LOCALIZED LIFETIME CONTROL; NPT-IGBTS; STATIC STATE MODEL;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 33747072031     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (9)

1. Baliga B J, Sun E. Comparison of gold, platinum and electron irradiation for controlling lifetime in power rectifiers. IEEE Trans Electron Devices, 1977, 24(6): 685
2. Vobecky J, Hazdra P. Future trends in local lifetime control. Proc ISPSD, 1996: 161
3. Konishi Y, Onishi Y, Momota S. Optimized local lifetime control for the superior IGBT's. Proc ISPSD, 1996: 335
4. Saggio M, Raineri V, Letor R, et al. Innovative localized lifetime control in high-speed IGBT's. IEEE Electron Device Lett, 1997, 18(7): 333
5. Fang Jian, Tang Xinwei, Li Zhaoji, et al. Numerical and experimental study of localized lifetime control LIGBT by high dose He ions implantation. Chinese Journal of Semiconductors, 2004, 25(9): 1048
6. Fang Jian, Li Zhaoji, Li Hongyan. A transport model for conductivity modulation power devices with localized lifetime control by low energy He ion implantation. Acta Electronic Sinica, 2001, 29(8): 1078(in Chinese)
7. Yuan Xiaolu, Udrea F, Lee Coulbeck, et al. On-state analytical modeling of IGBTs with local lifetime control. IEEE Trans Power Electron, 2002, 17(5): 815
8. Fang Jian, Li Zhaoji, Li Hongyan, et al. High speed LIGBT with localized lifetime control by using high dose and low energy Helium implantation. ICSICT, 2001: 166
9. Vobecky J, Hazdra P, Jorda X, et al. Parameter optimization of the 600 V IGBT using the backside Proton irradiation. Proc the 6th Int Seminar on Power Semiconductors, 2002: 245