Numerical and experimental study of localized lifetime control LIGBT by high dose He ion implantation

Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors

Volumn 25, Issue 9, 2004, Pages 1048-1054

  Fang, Jian ^a   Tang, Xinwei ^a   Li, Zhaoji ^a   Zhang, Bo ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Helium ion implantation; LIGBT; Localized lifetime control

Indexed keywords

COMPUTER SIMULATION; HELIUM; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DEVICE TESTING; SWITCHING;

FORWARD VOLTAGE DROP; HIGH DOSE AND LOW ENERGY HELIUM IMPLANTATION (LC-LIGBT); LOCALIZED LIFETIME CONTROL; TURN-OFF TIME;

ION IMPLANTATION;

EID: 11444252252     PISSN: 02534177     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (12)

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