Transport model for conductivity modulation power device with localized lifetime control by low energy He ion implantation

Tien Tzu Hsueh Pao/Acta Electronica Sinica

Volumn 29, Issue 8, 2001, Pages 1072-1075

  Fang, Jian ^a   Li, Zhao Ji ^a   Li, Hong Yan ^a   Yang, Jian ^a  

^a UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

Conductivity modulation; He ion implantation; Localized lifetime control; Power devices

Indexed keywords

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; HELIUM; ION IMPLANTATION; MATHEMATICAL MODELS; MODULATION; SEMICONDUCTOR DEVICES;

CHARGE CONTROLLED METHOD; CONDUCTIVITY MODULATION; FORWARD DROP; HELIUM ION IMPLANTATION; LOCALIZED LIFETIME CONTROL; POWER DEVICES; REVERSE RECOVERY TIME; TRANSPORT MODELS;

POWER INTEGRATED CIRCUITS;

EID: 0035428208     PISSN: 03722112     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (6)

1. Comparison of gold, platinum and electron irradiation for controlling lifetime in power rectifiers
2. Optimizing carrier lifetime profile for improved trade-off between turn-off time and forward drop
3. Localized lifetime control in insulated-gate transistors by Proton implantation
4. Voids in silicon power devices
5. Lifetime control in silicon devices by voids induced by He ion implantation
6. Analytical turn-off current model for type of conductivity modulation power MOSFET with extracted excess carrier devices