A new model of noise characteristics of SiC Schottky barrier MESFET with deep impurity levels and traps

Applied Surface Science

Volumn 252, Issue 15, 2006, Pages 5445-5448

  Aroutiounian, V M ^a   Avetisyan, G A ^a   Buniatyan, V V ^b   Soukiassian, P G ^c   Buniatyan, Vaz V ^b  

^a YEREVAN STATE UNIVERSITY   (Armenia)

^b STATE ENGINEERING UNIVERSITY OF ARMENIA   (Armenia)

^c DIF   (France)

Author keywords

Deep levels; Field effect transistor; Noise characteristic; Schottky barrier; Traps

Indexed keywords

ACOUSTIC NOISE; ELECTRON TRAPS; ENERGY GAP; FIELD EFFECT TRANSISTORS; SCHOTTKY BARRIER DIODES; SILICON CARBIDE;

DEEP LEVELS; NOISE CHARACTERISTIC; SCHOTTKY BARRIERS; SILICON CARBIDE SCHOTTKY BARRIER FIELD EFFECT TRANSISTORS (MESFET); SMALL-SIGNAL REGIME; TRAPS;

MESFET DEVICES;

EID: 33747010694     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2005.12.050     Document Type: Article

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