Sensitivity of p-n junction based on SiC doped with deep impurity acceptor levels

Applied Surface Science

Volumn 184, Issue 1-4, 2001, Pages 466-470

  Buniatyan, V V ^a   Gasparyan, F V ^b   Aroutiounian, V V ^b   Soukiassian, P ^c,d  

^a STATE ENGINEERING UNIVERSITY OF ARMENIA   (Armenia)

^b YEREVAN STATE UNIVERSITY   (Armenia)

^c CEA SACLAY   (France)

^d UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

Deep levels; Gradient; Internal field; Sensitivity; Silicon carbide

Indexed keywords

DOPING (ADDITIVES); PHOTOCURRENTS; PHOTOELECTRICITY; PHOTOSENSITIVITY; SILICON CARBIDE;

DRIFT PHOTODIODES;

PHOTODIODES;

EID: 0035852226     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(01)00686-9     Document Type: Article

References (10)